Hydrogen in amorphous silicon

Hydrogen effusion from tritiated amorphous silicon

Structural defects and hydrogen clustering in amorphous silicon

We have studied by small angle X-ray scattering the structural evolution on the atomic and nanoscale of hydrogenated amorphous silicon prepared both by ion implantation and by plasma-enhanced chemical vapor deposition and containing a similar H content. Results show that the initial structure of both samples is homogeneous on the nanoscale. Upon annealing, low-density features on the nanometer ...

Theoretical models of hydrogen-induced defects in amorphous silicon dioxide

Al-Moatasem El-Sayed,1,* Yannick Wimmer,2,† Wolfgang Goes,2,‡ Tibor Grasser,2,§ Valery V. Afanas’ev,3,‖ and Alexander L. Shluger1,¶ 1Department of Physics and Astronomy and London Centre for Nanotechnology, University College London, Gower Street, London, WC1E 6BT, United Kingdom 2Institute for Microelectronics, Technische Universität Wien, A-1040 Vienna, Austria 3Department of Physics, Univers...

Energetics of Hydrogen in Amorphous Silicon: an ab initio study

Using ab initio density functional calculations, we investigate the energetics of hydrogen in amorphous silicon. We compare a hydrogen at a silicon bond center site in a-Si to one in c-Si. In addition, we identify the energetics of the dominant traps for H in a-Si. The present calculations are used to elucidate many experiments and concepts regarding hydrogen in amorphous silicon.

Morphology and hydrogen in passivating amorphous silicon layers

Hydrogenated intrinsic amorphous silicon ((i) a-Si:H) can be grown by plasma-enhanced chemical vapor deposition with a non-columnar or columnar morphology. Nuclear resonant reaction analysis and corresponding effective stopping cross section analysis indicate a dependency of hydrogen effusion on the morphology of the (i) a-Si:H layer as well as the doping type and concentration of the c-Si wafe...